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May 2002
NDS9407
60V P-Channel PowerTrench ? MOSFET
General Description
Features
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
? –3.0 A, –60 V.
R DS(ON) = 150 m ? @ V GS = –10 V
R DS(ON) = 240 m ? @ V GS = –4.5 V
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Applications
? Power management
? Load switch
? Battery protection
? Low gate charge
? Fast switching speed
? High performance trench technology for extremely
low R DS(ON)
? High power and current handling capability
D D
D D
D D
D D
5
6
4
3
7
2
S S S
S S G
SO-8
Pin 1 SO-8
S
G
8
1
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
–60
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
–3.0
A
– Pulsed
–12
P D
Maximum Power Dissipation
(Note 1a)
2.5
W
(Note 1b)
(Note 1c)
1.2
1.0
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +175
° C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
° C/W
(Note 1c)
125
R θ JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
Package Marking and Ordering Information
Device Marking
NDS9407
Device
NDS9407
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
? 2002 Fairchild Semiconductor Corporation
NDS9407 Rev B 1 (W)
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相关代理商/技术参数
NDS9407 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
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